| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can control the variation of a gate threshold and can inhibit the increase of parasitic resistance causing the reduction of an amount of a driving current. SOLUTION: The method includes a process to deposit a gate insulating film 3 on a semiconductor substrate 1, a process to form a gate electrode 4 on the gate insulating film 3, a process to deposit insulating films 5, 6 to cover the gate electrode 4, a process to remove part of the insulating films 5, 6 by anisotropic etching so that the semiconductor substrate 1 is not exposed, a process to remove part of the insulating films 5, 6 by isotropic etching to form spacers 5, 6 on the side wall of the gate electrode 4, a process to expose the semiconductor substrate 1, and a process to form semiconductor areas 7a-7d by implanting an impurity ion into the semiconductor substrate 1 using the gate electrode 4 and spacers 5, 6 as a mask and carrying out heat treatment. COPYRIGHT: (C)2007,JPO&INPIT
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