| 摘要 |
PROBLEM TO BE SOLVED: To enlarge the opening ratio and the depth of a trench on the surface of a semiconductor substrate. SOLUTION: In a manufacturing method of the semiconductor device which forms a plurality of trenches in the semiconductor substrate, the opening ratio of the trench 13 is 30% or more and 50% or less, and the depth is 40μm or more and 150μm or less in the surface of the semiconductor substrate. The trench is formed using an etching gas containing at least SF<SB>6</SB>and O<SB>2</SB>. This can control an amount of the sedimentation of an etching product with respect to a trench side wall by adjusting flow rates of SF<SB>6</SB>and O<SB>2</SB>. COPYRIGHT: (C)2007,JPO&INPIT
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