| 摘要 |
PROBLEM TO BE SOLVED: To provide a high voltage-withstanding semiconductor apparatus and its small-sized manufacturing method suitable for forming it at the same time as a low voltage-withstanding MOS transistor. SOLUTION: The semiconductor apparatus has a gate electrode formed through a gate insulating film, and a second conductive type source area and a drain area, in an area segmented by an element separation insulating film formed in a first conductive type semiconductor layer. At least, one of the source area and the drain area has a first low concentration area and high concentration area, and has a channel stopper area formed at a lower side of the element separation insulating film and a second low concentration area of a second conductive type between the source area and the drain area. The semiconductor layer directly under the gate electrode projects toward the channel stopper area side along the gate electrode, and the semiconductor layer and the channel stopper area contact each other. COPYRIGHT: (C)2007,JPO&INPIT
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