| 摘要 |
PROBLEM TO BE SOLVED: To avoid a breakdown between a circuit element and a metal electrode in a semiconductor device, such as MMIC using a semi-insulating GaAs substrate. SOLUTION: The semiconductor device is constructed in such a manner that a back metal electrode film 7a on the back of the semi-insulating GaAs substrate 1 is ohmic-joined with the semi-insulating GaAs substrate 1, and a side metal electrode film 7b on the side of a via hole 6 is ohmic-joined on the interface with the semi-insulating GaAs substrate 1. When the back metal electrode film 7a (or, a side metal electrode film 7b) has an electric field of a potential applied thereon and higher than that of an epitaxial resistor 3, a hole-injection from the side of the back metal electrode film 7a (or, the side metal electrode film 7b) to the semi-insulating GaAs substrate 1 can be prevented. Consequently, the breakdown is avoided between the epitaxial resistor 3 and the back metal electrode film 7a (or, the side metal electrode film 7b), and the leakage current can be then prevented from increasing. COPYRIGHT: (C)2007,JPO&INPIT
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