| 摘要 |
PROBLEM TO BE SOLVED: To provide a high frequency semiconductor device in which a passive element and a separation groove are formed at the same time, and also to provide a method for manufacturing the device. SOLUTION: A GaAs substrate 101 is wet etched to form a slant surface. An SiO<SB>2</SB>film 104 is formed by a plasma CVD process. A Ti film 105, a first Pt film 106 and an STO film 107 are formed. A second Pt film 108 is formed, to which a second resist mask 109 is applied. Using a high frequency inductively-coupled plasma etching apparatus having two reaction chambers, the second Pt film 108 is etched with a mixture gas of chlorine and argon in one of the reaction chambers. The STO film 107 is etched with use of a mixture gas of chlorine and argon and ethane added thereto in one reaction chamber. The resist mask 109 is removed, and the second Pt film 108, the dielectric film 107, and the first Pt film 106 are partially covered with a third resist mask 111. A lower electrode made of Pt is etched with the mixture gas of chlorine and argon. A passive element 112 is formed simultaneously with a separation groove 110 in a slant surface of the GaAs substrate 101. COPYRIGHT: (C)2007,JPO&INPIT
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