Substrate for electron source formation, electron source, and image-forming apparatus

摘要

A substrate for electron source formation on which a plurality of electron-emitting devices are arranged, comprising a layer where SiO₂ is made a main component on the substrate, wherein an etching rate of the SiO₂ layer at room temperature in 0.4 wt % of hydrogen fluoride ammonium solution (NH₄-HF₂) is 150 nm/min or less reducing the time-dependent change of an electron emission characteristic of an electron-emitting device in low cost, sharply improving the increasing speed of a device current If and the uniformity of final arrival values of If sharply reducing the dispersion of the electron emission characteristic, and an electron source and an image-forming apparatus that each use-the substrate.