| 摘要 |
A semiconductor device includes an ONO film ( 17 ) formed on a semiconductor substrate ( 15 ), a first gate ( 14 ), the first gate ( 14 ) formed on the ONO film ( 17 ), a source ( 10 ) and a drain ( 12 ) provided at both sides of the first gate ( 14 ) to face each other, and a second gate ( 16 ), the second gate ( 16 ) being a side gate provided at a side of the first gate ( 14 ) other than the side where the source ( 10 ) and the drain ( 12 ) are provided. This makes it possible to provide the semiconductor device in which a desired circuit characteristic is obtainable in a non-destructive manner and in a non-volatile fashion while reducing the trial production times thereof for IC development.
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