| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a perovskite oxide layer, a method for manufacturing a ferroelectric memory and a method for manufacturing a surface wave elastic wave element, wherein an interface with an electrode layer is excellent. <P>SOLUTION: The method for manufacturing the perovskite oxide layer contains the steps of forming a first oxide layer 22 composed of perovskite oxide on a substrate 10; forming a second oxide layer 24 composed of at least one layer of a perovskite oxide layer crystallized at a lower temperature than a crystallization temperature of the first oxide layer 22 on the first oxide layer 22, and a pyrochlore layer having the same element as the perovskite oxide; forming an electrode layer 30 on the second oxide layer 24; and making a heat treatment. <P>COPYRIGHT: (C)2007,JPO&INPIT |
