| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma treating apparatus for managing the machining parameters of a semiconductor substrate stably by minimizing the amount of change. <P>SOLUTION: The plasma treating apparatus introduces process gas into a reaction chamber 1 by a gas introduction line 3, induces plasma by applying high-frequency power by a high-frequency power supply 13, and film-forms or etches the semiconductor substrate W installed in the reaction chamber 1. The apparatus comprises a means for monitoring the value of capacitance when performing the impedance matching of the high-frequency power applied to the reaction chamber 1 by an impedance matching apparatus 14, and a means for determining the variations of the partial pressure of the process gas in the reaction chamber using the detected capacitance value. A change in an electrical capacitance that is one of plasma characteristics caused by variations in the partial pressure of gas by the suction of gas into the reaction chamber 1 and discharge gas from a reaction product is detected by a change in the matching capacitance value of the impedance matching apparatus 14 and a change in the matching capacitance value in a specific step normally, thus simplifying monitoring. <P>COPYRIGHT: (C)2007,JPO&INPIT |
