| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce electric fields between a memory cell connected to an edge word line and a selection transistor, thereby preventing program disturb due to hot electrons. <P>SOLUTION: The method includes the steps of boosting, to a first voltage, channels of a first group of memory cells connected to first and n-th edge word lines of N word lines of memory cells connected in series between first transistors connected to respective bit lines and second selection transistors connected to a common source line, and non-selected bit lines of the bit lines; and boosting, to a second voltage, channels of a second group of memory cells connected to the remainder of the word lines excluding the first and n-th edge word lines and word lines to be programmed and the non-selected bit lines. The first voltage is lower than the second voltage. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
