| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device having a reference current generation circuit in which an adjusting time of threshold voltage of a reference memory cell can be shortened, and sufficient current margin can be secured. <P>SOLUTION: The reference current generation circuit 22 has a plurality of current mirror circuits CMC1-CMC3 in which mirror ratio is different, and generates a plurality of reference current based on a current flowing in a reference memory cell RMC. A plurality of sense amplifiers SA1-SA3 detect a current flowing in the selected memory cell MC based on the reference current generated by the reference current generating circuit 22. A voltage generation circuit varies a potential supplied to a word line of a memory cell. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
