| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a cold electron emission element as easily as a conventional element having no current control function by suppressing a local large current without raising operating voltage by mounting a current control function, reducing current variation to the minimum, easily attaining low cost and a large area and reducing drive voltage circuit cost by providing an electrode for switching aside from a gate electrode. <P>SOLUTION: A first conductive layer 2 and a second conductive layer 3 are provided on the same plane of an insulating substrate 1 through a TFT channel A formed of a semiconductor thin film layer 4 not to directly contact mutually. An insulating layer 5 is provided on the semiconductor thin film layer, a semiconductor thin film layer and a gate hole B without an insulating layer are provided on the second conductive layer, a gate electrode layer 7 is provided around the gate hole on the insulating layer, and a third conductive layer 6 is provided in an upper equivalent part of the channel A so that the insulating layer 5 functions as a gate insulating layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
