| 摘要 |
PROBLEM TO BE SOLVED: To measure the response of a semiconductor wafer to CV stimulation given to semiconductor wafer by a contact or a probe via a coating extremely-thin dielectric layer of the semiconductor wafer without making a leakage current flow to a dielectric layer. SOLUTION: The method of measuring at least one electric property of the semiconductor wafer 10 comprises a step of providing an elastic transformable conductive contact 6 on the external surface of which an insulating oxide layer 60 is formed by a controlled oxidation process exemplified unlimitedly by thermal oxidation, anodic oxidation, or deposit oxidation. First electric contract is formed between an oxide layer 60 on the surface of the contact 6 and a dielectric layer 14 on the top surface 16 of the semiconductor wafer 10. A second electric contact is formed on the semiconductor wafer 10. A CV stimulation is given between the first electric contact and the second electric contact. The response of the semiconductor wafer 10 to the CV stimulation is measured. At least one electric property of the dielectric layer 14, the semiconductor wafer 10, or the dielectric layer and the semiconductor wafer is measured by the response. COPYRIGHT: (C)2007,JPO&INPIT |
