| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor chip having high flexural strength in a method of manufacturing the semiconductor chip for forming a singulated semiconductor chip by dividing a semiconductor wafer. SOLUTION: In the manufacturing method, plasma etching is applied from a second surface to a semiconductor wafer in which an insulating film is arranged on a divided region on a first surface and a mask for defining the dividing region is arranged on the second surface as a surface opposite to the first surface, thereby removing a portion equivalent to the divided region and exposing the insulating film from the etching bottom surface, and after that, the plasma etching is continuously executed in a state that the exposed insulating film is charged by ions in plasma, thereby removing each of corner portions contacting with the insulating film in each of element forming regions. In this method, anisotropic etching is performed for the semiconductor wafer at one of timings. COPYRIGHT: (C)2007,JPO&INPIT |
