发明名称 FIELD EFFECT TRANSISTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a minute organic field effect transistor. <P>SOLUTION: The field effect transistor is characterized in that: a drain electrode and a source electrode are arranged on an insulating layer; a gate electrode is arranged under the insulating layer; a semiconductor active layer is provided between the drain and source electrodes arranged on the insulating layer; the drain electrode and/or source electrode comprises one or a plurality of carbon nano tubes; and the semiconductor active layer is an organic semiconductor. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006294667(A) 申请公布日期 2006.10.26
申请号 JP20050109480 申请日期 2005.04.06
申请人 TORAY IND INC 发明人 TSUKAMOTO JUN;SANADA JUNJI
分类号 H01L29/786;H01L29/06;H01L51/05 主分类号 H01L29/786
代理机构 代理人
主权项
地址