| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device and a manufacturing method thereof which has an excellent electric characteristic and a higher performance than conventional ones. SOLUTION: The manufacturing method of the ferroelectric memory device has a process for forming a lower-side insulating film (first insulating film ) 30 on a semiconductor substrate 11; a process for forming a ferroelectric capacitor structure 40 wherein a lower-side electrode 42, a ferroelectric layer 44, and an upper-side electrode 46 are laminated successively; a process for forming an upper-side insulating film (fifth insulating film) 50 covering the ferroelectric capacitor structure 50; a process for forming a wiring layer 70 extended on the upper-side insulating film; and a process for forming an aluminum oxide film 90 covering the wiring layer and the upper-side insulating film and having its film thickness of 5-50 nm. COPYRIGHT: (C)2007,JPO&INPIT
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