| 摘要 |
PROBLEM TO BE SOLVED: To form hetero-junction of flat and steep group III-V compound semiconductor of high quality with less impurity or defect. SOLUTION: The compound semiconductor device includes hetero-junction between a first group III-V compound semiconductor layer consisting of one or more kinds of group III elements containing at least In and one or more kinds of group V elements containing not Sb but As, and a second group III-V compound semiconductor layer consisting of one or more kinds of group III elements containing no In and two or more kinds of group V elements containing at least As and Sb. The hetero-junction is formed by molecular beam epitaxial growth using As4 as a molecular species of As molecular beam, in the temperature range of 460-540°C. COPYRIGHT: (C)2007,JPO&INPIT
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