| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which can perform easily a short-circuit and insulating with a semiconductor substrate and an electrode, can prevent the breakdown of an insulating film in a plasma processing step, and can prevent the curvature of the semiconductor substrate. SOLUTION: An exposed part of the semiconductor substrate 11 and the through-electrode 12 is connected electrically through the conductor 3 for the short-circuit, respectively, to the support side conductor 22 of the stiff support 2, and the semiconductor substrate 11 and the through-electrode 12 are short-circuited. A plasma CVD is performed using a plasma CVD device 30 in this state. Since the semiconductor substrate 11 and the through-electrode 12 are in an equal potential, the breakdown is prevented in the side wall insulating film 13. Moreover, since the support 2 has the stiffness, the warpage of the semiconductor substrate 11 is prevented. After the plasma CVD, the conductor 3 for the short-circuit is removed, and a semiconductor device forming unit member 1 and the support 2 are made to exfoliate. Consequently, the semiconductor substrate 11 and the through-electrode 12 can be easily returned to the original insulated state. COPYRIGHT: (C)2007,JPO&INPIT
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