| 摘要 |
PROBLEM TO BE SOLVED: To increase the speed of a read operation while increasing density of a cell. SOLUTION: In a method for reading data from a magnetic random access memory comprising a first wiring BL, a plurality of second wirings WLn, and a plurality of magnetoresistive elements MTJn disposed between the first and second wirings and at intersections between the first and second wirings and electrically connected to the first wiring, when data is read from an element MTJ3 selected from the magnetoresistive elements, a resistance value of the selected element MTJ3 is read using a second current Ir2 which is caused to flow from the first wiring to the selected element MTJ3 while causing a current Ir1 to flow through a wiring WL3 selected from the second wirings corresponding to the selected element MTJ3. COPYRIGHT: (C)2007,JPO&INPIT
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