发明名称 Catalyst support substrate, method for growing carbon nanotubes using the same, and the transistor using carbon nanotubes
摘要 A catalyst supporting substrate includes a first region ( 54 ) which is formed on a substrate ( 50 ); and a second region ( 55 ) which is formed covering a part of the first region. The first region ( 54 ) includes a catalyst supporting portion ( 54 a) containing a first material. The second region ( 55 ) includes a catalyst portion ( 55 ) containing a second material which is different from the first material. The first material includes a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof. The second material is a catalyst which grows carbon nanotubes in a vapor phase.
申请公布号 US2006240974(A1) 申请公布日期 2006.10.26
申请号 US20050523418 申请日期 2005.02.01
申请人 NEC CORPORATION 发明人 HONGO HIROO
分类号 B01J29/04;C01B31/02;B01J21/04;B01J21/06;B01J23/16;B01J23/46;B01J23/70;B01J23/745;B01J35/00;B01J37/00;B01J37/02;C23C14/14;C23C16/06;H01L29/786;H01L51/00 主分类号 B01J29/04
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