发明名称 Non-volatile memory e.g. ROM, cell state detecting method, involves keeping voltage of one capacitance constant, so that current of another capacitance flows to cell arrangement and through memory cell
摘要 <p>The method involves charging two capacitances (202, 224) of a memory cell arrangement to two predetermined voltage potentials (217, 221), respectively, where the latter potential is higher than the former potential. The capacitance (224) is coupled with the arrangement. Voltage of the capacitance (202) is kept constant, so that a current of the capacitance (224) flows to the arrangement and through a memory cell (201). An independent claim is also included for an integrated circuit comprising a matrix of memory cells.</p>
申请公布号 DE102005030874(B3) 申请公布日期 2006.10.26
申请号 DE20051030874 申请日期 2005.07.01
申请人 INFINEON TECHNOLOGIES FLASH GMBH & CO. KG 发明人 SROWIK, RICO;BORROMEO, CARLO;CURATOLO, GIACOMO
分类号 G11C16/26;G11C7/12 主分类号 G11C16/26
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