发明名称 |
Non-volatile memory e.g. ROM, cell state detecting method, involves keeping voltage of one capacitance constant, so that current of another capacitance flows to cell arrangement and through memory cell |
摘要 |
<p>The method involves charging two capacitances (202, 224) of a memory cell arrangement to two predetermined voltage potentials (217, 221), respectively, where the latter potential is higher than the former potential. The capacitance (224) is coupled with the arrangement. Voltage of the capacitance (202) is kept constant, so that a current of the capacitance (224) flows to the arrangement and through a memory cell (201). An independent claim is also included for an integrated circuit comprising a matrix of memory cells.</p> |
申请公布号 |
DE102005030874(B3) |
申请公布日期 |
2006.10.26 |
申请号 |
DE20051030874 |
申请日期 |
2005.07.01 |
申请人 |
INFINEON TECHNOLOGIES FLASH GMBH & CO. KG |
发明人 |
SROWIK, RICO;BORROMEO, CARLO;CURATOLO, GIACOMO |
分类号 |
G11C16/26;G11C7/12 |
主分类号 |
G11C16/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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