SILICON SINGLE CRYSTAL MANUFACTURING METHOD AND SILICON WAFER

摘要

In a silicon single crystal manufacturing method, a silicon single crystal composed of a nondefective region where no grown-in defect exists is grown by CZ method, a gas of a material including hydrogen atoms is added to an atmosphere gas in a growing apparatus, and nitrogen and/or carbon is doped in the crystal. Therefore, a wafer wherein the entire plane is composed of the nondefective region having no grown-in defect and BMD is sufficiently and uniformly formed can be cut out. Such wafer can be widely used since generation of characteristically nonconforming integrated circuits formed on the wafer can be greatly reduced and that the wafer can contribute to improvement of the manufacturing yield as a substrate meeting the demands of circuit microminiaturization and density increase.