| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a process for fabricating a semiconductor device in which crystal defect to occur from an isolation region is reduced. <P>SOLUTION: The process for fabricating a semiconductor device comprises steps of: forming a recognition mark which defines a region for forming a well in a semiconductor substrate; forming a mask patterned to open the well forming region by using the recognition mark; introducing impurities into the well forming region; performing heat treatment for forming a well by diffusing impurities; and forming an isolation region in the semiconductor substrate. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
