| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect transistor improving a driving current at the on-time of a gate electrode with a drain current at the off-time of the gate electrode suppressed. SOLUTION: The field-effect transistor comprises a semicondcutor substratum, a gate insulating film provided on the semiconductor substratum, a gate electrode provided on the semiconductor substratum through the gate insulating film, and a source region and a drain region provided on both sides of the gate electrode of the semiconductor substratum. The area of the part sandwiching a channel-forming region and facing the drain region is smaller than that of the part sandwiching the channel-forming region and facing the source region. COPYRIGHT: (C)2007,JPO&INPIT
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