| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for obtaining a high quality, large size silicon carbide single crystal. SOLUTION: The method for producing the silicon carbide single crystal comprises accommodating a sublimation raw material in a first end part in a reactor, arranging a silicon carbide seed crystal on a stage provided in a second end part nearly opposing to the sublimation raw material in the reactor, and growing the silicon carbide single crystal by recrystallizing a sublimated raw material on the seed crystal. The diameter of the stage in the sublimation raw material side is set to be smaller than that of the second end part side. COPYRIGHT: (C)2007,JPO&INPIT
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