| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide single crystal from which wafers few in defect and excellent in crystallinity can be obtained, and to provide an ingot of the silicon carbide single crystal. SOLUTION: The method for producing the silicon carbide single crystal comprises changing the concentration of an added element in a growing single crystal from the same concentration as that in a seed crystal to a desired concentration by gradually increasing or decreasing the concentration of the added element within a range of prescribed concentration changing rate. The ingot of the silicon carbide single crystal is produced by this method. COPYRIGHT: (C)2007,JPO&INPIT
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