GeSOI transistor with low junction current and low junction capacitance and method for making the same

摘要

A semiconductor device ( 101 ) is provided herein which comprises a substrate ( 103 ) comprising germanium. The substrate has source ( 107 ) and drain ( 109 ) regions defined therein. A barrier layer ( 111 ) comprising a first material that has a higher bandgap (E_g) than germanium is disposed at the boundary of at least one of said source and drain regions. At least one of the source and drain regions comprises germanium.