发明名称 |
Generation of MRAM programming currents using external capacitors |
摘要 |
An apparatus comprising a magnetoresistive random access memory (MRAM) and a method of forming the same. The apparatus includes a memory circuit comprising an MRAM cell, and a charge pump circuit electrically coupled to the memory circuit wherein the memory circuit and at least a first portion of the charge pump circuit are fabricated on a single semiconductor chip. The charge pump circuit further includes a second portion comprising at least one capacitor external to the semiconductor chip. The second portion of the charge pump circuit may be packaged in a chip package or external to the chip package.
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申请公布号 |
US2006239056(A1) |
申请公布日期 |
2006.10.26 |
申请号 |
US20050112851 |
申请日期 |
2005.04.22 |
申请人 |
GOGL DIETMAR;VIEHMANN HANS-HEINRICH;BRAUN DANIEL |
发明人 |
GOGL DIETMAR;VIEHMANN HANS-HEINRICH;BRAUN DANIEL |
分类号 |
G11C5/00 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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