CHEMICAL-MECHANICAL POLISHING METHOD AND APPARATUS

摘要

The invention concerns a method for manufacturing a semiconductor multilayer wafer having a thin surface layer, a support layer and a buried layer between said surface layer and said support layer, said method being characterized in that said method comprises a preliminary calibration of the CMP in order to define a preliminary thickness which correspond to a preliminary value of thickness of said polish layer said preliminary thickness is defined by the addition of a thickness of a polish layer known as being associated to one of said reference points, and a thickness to be removed, before said CMP the thickness of said polish layer is adapted in order to be substantially equal to said preliminary thickness.