| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a nonvolatile semiconductor memory device having improved reliability of data read/write. <P>SOLUTION: A path routing from a write current source (4W) supplying a write current through an internal data line(IDL), a bit line (BL) and a source line (SL) to a reference potential node (ND) except a memory cell (MC) is configured to have a constant resistance, and each of the resistance value of the current path between the memory cell and a variable current source and the resistance value of the current path between the memory cell and the reference potential node is set to 500 Ω or lower. <P>COPYRIGHT: (C)2007,JPO&INPIT |
