发明名称 IMAGE SENSOR MODULE AND METHOD OF MANUFACTURING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide an image sensor module having necessary minimum dimensions of thickness and area, and a method of manufacturing the same. <P>SOLUTION: A CMOS image sensor module using a wafer-level chip-size package technology includes an image-sensor-chip wafer on which partition walls of a lattice structure are formed in regions where image sensing regions are excluded, and a glass wafer on which an IR-filter coating layer and metal electrodes are formed. The image-sensor-chip wafer and the glass wafer are flip-chip bonded to simultaneously complete electrical connection and chip sealing. After metal wiring is added to the lower-side surface of the glass wafer, solder bumps and non-solder bumps are formed thereon. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006295164(A) 申请公布日期 2006.10.26
申请号 JP20060103801 申请日期 2006.04.05
申请人 KOREA ADVANCED INST OF SCI TECHNOL 发明人 PAIK KYUNG WOOK;YIM MYUNG-JIN;SON HO-YOUNG;KWON YONG-MIN
分类号 H01L27/14;H01L23/02;H01L23/12;H01L27/146;H01L31/0203;H01L31/0216;H01L31/0232;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/14
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