发明名称 DRAM LAMINATED PACKAGE, DIMM AND SEMICONDUCTOR MANUFACTURING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a DRAM laminated package which makes it possible to make tests and/or relief of high speed DRAMs in a semiconductor tester, and a DIMM and a semiconductor manufacturing method. <P>SOLUTION: The DRAM laminated package has an interface chip 2 between the stacked DRAMs 4 and the terminals connected to a tester 1 to input or output the address, command, and data at least, and mounts the DRAMs and the interface chip in a package. The interface chip 2 has an algorithmic pattern creating section 10 to create a test pattern to test the DRAMs, circuits 20, 21 to apply the created test pattern to the DRAMs, and a test circuit 8 having a comparator 18 to compare the response signals from the DRAMs and the expected values. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006294093(A) 申请公布日期 2006.10.26
申请号 JP20050110752 申请日期 2005.04.07
申请人 HITACHI LTD;ELPIDA MEMORY INC 发明人 SONODA YUJI;KIKUCHI SHUJI;HIRANO KATSUNORI;ANJO ICHIRO;KATAGIRI MITSUAKI
分类号 G11C29/12;G01R31/28;G11C11/401;G11C29/44;G11C29/56 主分类号 G11C29/12
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