发明名称 SEMICONDUCTOR DEVICE, MEMORY CORE SECTION CHIP, MEMORY PERIPHERAL CIRCUIT SECTION CHIP, AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an inexpensive semiconductor device which operates by low voltage and low power consumption. <P>SOLUTION: This semiconductor device is equipped with a plurality of circuit blocks including a 1st circuit block (DRAM core) and a 2nd circuit block (DRAM peripheral circuitry) of different block parameters, such as a design rule. The 1st circuit block is formed on the 1st semiconductor chip (DRAM core chip) 101, and the 2nd circuit block is formed on the 2nd semiconductor chip 102 and connected electrically to the 1st circuit block. Thereby, each semiconductor chip can be manufactured at a low cost. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2006294244(A) 申请公布日期 2006.10.26
申请号 JP20060188620 申请日期 2006.07.07
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 MORI TOSHIKI;NAKAO ICHIRO;FUJITA TSUTOMU;SEGAWA REIJI
分类号 G11C11/401;G11C16/02 主分类号 G11C11/401
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