NONVOLATILE SEMICONDUCTOR MEMORY APPARATUS

摘要

PROBLEM TO BE SOLVED: To enable reading out multi-level data at high speed.

SOLUTION: A memory cell MC stores data of a plurality of bits. A first sense amplifier G3 compares a current outputted from the memory cell MC with a first reference current outputted from a reference current generating circuit G5. A latch circuit G4 holds an output signal of the first sense amplifier G3. The reference current generating circuit G5 outputs a second reference current for reading out second bit data from the memory cell MC in accordance with the first bit data outputted from the latch circuit G4.

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