METHOD OF MANUFACTURING A GATE STRUCTURE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME

摘要

A method of manufacturing a gate structure and a method of manufacturing a semiconductor device by using the same are provided to improve the character of the gate structure through a surface process fabrication. A gate oxidation layer(105) is fabricated on a substrate(100). The gate oxidation layer is processed by ozone water that includes ozone and deionized water. A silicon wafer or a silicon on insulator(SIO) is used as the substrate. The gate oxidation layer is formed by a thermal oxidation process or a chemical vapor deposit process. A gate conductive layer is formed by using a poly-silicon or a poly-SiGe on the gate oxidation layer which is processed by the ozone water. A mask layer is formed on the gate conductive layer. A mask pattern, a gate conductive pattern, and a gate oxidation layer pattern are formed by patterning the mask layer, the gate conductive layer, and the gate oxidation layer respectively. The gate oxidation layer is processed for 60 to 600 seconds.