GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,申请号EP20030814571-传众专利搜索

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发明名称	GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY
摘要	Lateral epitaxial overgrowth (LEO) of non-polar a-plane gallium nitride (GaN) films by hydride vapor phase epitaxy (HVPE) results in significantly reduced defect density.
申请公布号	EP1576671(A4)	申请公布日期	2006.10.25
申请号	EP20030814571	申请日期	2003.07.15
申请人	THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;JAPAN SCIENCE AND TECHNOLOGY AGENCY	发明人	HASKELL, BENJAMIN, A.;FINI, PAUL, T.;MATSUDA, SHIGEMASA;CRAVEN, MICHAEL, D.;DENBAARS, STEVEN, P.;SPECK, JAMES, S.;NAKAMURA, SHUJI
分类号	H01L21/205;C30B25/02;H01L21/20	主分类号	H01L21/205
代理机构		代理人
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