METHOD FOR IMPROVING UNIFORMITY IN A PHOTORESIST PATTERN CRITICAL DIMENSION

摘要

A method for improving uniformity in a photoresist pattern critical dimension is provided to improve yield by performing an etching process after forming a photoresist pattern and a BARC(Bottom Anti-Reflective Coating) layer. A substrate to be patterned is formed on a dummy wafer(S500) and a test photoresist pattern(S502) is formed on the substrate. A CD(Critical Dimension) of the test photoresist pattern by shot exposure of the dummy wafer is measured(S506) and then the substrate is etched by using the test photoresist pattern as an etching mask(S508). The CD is measured after etching(S510) and then a CD compensation value by shot exposure is set by comparing the CDs before and after etching(S512). A thin film of a BARC layer is formed. A photoresist pattern is formed on the BARC layer based on the CD compensation value. The BARC layer and the substrate are etched in turn and the photoresist is removed to form a predetermined pattern.