PHASE CHANGE MEMORY DEVICES EMPLOYING CELL DIODES AND METHODS OF FABRICATING THE SAME

摘要

A phase change memory device and its manufacturing method are provided to improve the degree of integration by self-aligning cell diodes and phase changeable material patterns with each other using cell diode holes of a predetermined interlayer dielectric. A first interlayer dielectric(14) is formed on a semiconductor substrate(10). A plurality of cell diode holes(14h) are formed through the first interlayer dielectric. First and second semiconductor patterns(16n,16p) are sequentially formed within each cell diode hole. A cell diode electrode(18) is formed on the second semiconductor pattern. A confined phase changeable material pattern(24a) for filling the cell diode hole is formed on the cell diode electrode. An upper electrode(26a) is formed on the confined phase changeable material pattern.