METHOD OF FORMING ZRO2 THIN FILM USING PLASMA ENHANCED ATOMIC LAYER DEPOSITION AND METHOD OF MANUFACTURING CAPACITOR OF SEMICONDUCTOR MEMORY DEVICE HAVING THE THIN FILM

摘要

A method for fabricating ZrO2 thin film and a method for manufacturing a capacitor of a semiconductor memory device including the same are provided to improve stability of leakage current characteristics by using a tris(N-ethyl-N-methylamino)(tert-butoxy)zirconium precursor. A tris(N-ethyl-N-methylamino)(tert-butoxy)zirconium precursor is applied to a substrate that is maintained at a predetermined temperature, and then a chemical absorption layer of the precursor is formed on the substrate(20). The substrate where the chemical absorption layer of the precursor is formed is exposed during a predetermined time at plasma atmosphere containing oxygen, thereby forming a Zr oxide layer on the substrate(50).