| 摘要 |
<p>A method for forming a self-aligned source oxide layer in a flash memory is provided to remove lattice damage to a semiconductor substrate by performing a self-align source etch process and an ion implantation process and by performing an etch process for removing a defect on the resultant structure. A gate line is formed on a semiconductor substrate having an isolation layer, including an oxide layer, a first polysilicon layer, a dielectric layer and a second polysilicon layer(S200). After photoresist is coated on the resultant structure, an exposure and development process is performed so that an active region of the substrate is opened and a photoresist pattern having an open isolation layer is formed. The isolation layer is etched according to the photoresist pattern to form a trench, and an ion implantation process is performed on the resultant structure to form a source/drain region(S204). A dry etch process is performed on the resultant structure to remove a defect of the semiconductor substrate(S206). After the photoresist pattern is removed, a SAS(self-aligned source) oxide layer is formed by performing a cleaning process before the SAS oxide layer is formed and after a dry etch process is performed(S210).</p> |
