| 摘要 |
A method for fabricating a semiconductor device is provided to selectively form a metal silicide layer only in a desired region by preventing a substrate from being damaged while avoiding a pattern defect. A semiconductor substrate(10) is prepared in which a non-silicide region(A1,A2) and a silicide region(B1,B2) are defined. A silicide control material layer is formed on the substrate, made of an oxide layer, a nitride layer or a composition layer thereof. A pattern of the silicide control material layer formed on the silicide region is dry-etched by using C4F8, CHF3, O2 and Ar gas. A CDE(chemical dry etching) process using CF4 gas and O2 gas is performed on the residual part of the silicide control material layer on the silicide region to form a silicide control layer(12') only on the non-silicide region.
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