| 摘要 |
A method of fabricating a resistor of a semiconductor device is provided to decrease size of the device by reducing space between the resistors. A first poly-silicon layer(22a), an isolation layer, and a second poly-silicon layer(26) are sequentially formed on a semiconductor device. The second poly-silicon layer and the isolation layer are patterned. An ion implanting process is performed on a whole surface of a substrate which the patterned second poly-silicon layer is formed on so that ions are implanted on the second poly-silicon layer and the first poly-silicon layer. The first poly-silicon layer is a poly-silicon layer used in a lower electrode for forming a PIP capacitor. The second poly-silicon layer is a poly-silicon layer used in an upper electrode for forming the PIP capacitor. The first contact(28a) is formed to contact to the upper of the first poly-silicon layer, and a second contact(28b) is formed to contact to the upper of the second poly-silicon layer. The first contact and the second contact are both connected.
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