| 发明名称 |
A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER |
| 摘要 |
<p>A method of forming a silicon nitride layer is described. According to the present invention, a silicon nitride layer is deposited by thermally decomposing a silicon/nitrogen containing source gas or a silicon containing source gas and a nitrogen containing source gas at low deposition temperatures to form a silicon nitride layer. The thermally deposited silicon nitride layer is then treated with hydrogen radicals to form a treated silicon nitride layer.</p> |
| 申请公布号 |
EP1713952(A2) |
申请公布日期 |
2006.10.25 |
| 申请号 |
EP20040814210 |
申请日期 |
2004.12.15 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG, SHULIN;SANCHEZ, ERROL ANTONIO C.;CHEN, AIHUA (STEVEN) |
| 分类号 |
C23C16/34;C23C16/44;C23C16/452;C23C16/455;C23C16/56;H01L21/00;H01L21/30;H01L21/314;H01L21/318;H01L21/336 |
主分类号 |
C23C16/34 |
| 代理机构 |
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