发明名称 |
DEPOSITION OF TITANIUM NITRIDE FILM |
摘要 |
<p>Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.</p> |
申请公布号 |
EP1715079(A1) |
申请公布日期 |
2006.10.25 |
申请号 |
EP20040807927 |
申请日期 |
2004.12.27 |
申请人 |
TOKYO ELECTRON LTD. |
发明人 |
MURAKAMI, SEISHI;TADA, KUNIHIRO |
分类号 |
C23C16/34;H01L21/28;H01L21/285;H01L21/768 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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