发明名称 DEPOSITION OF TITANIUM NITRIDE FILM
摘要 <p>Disclosed is a method of forming a titanium nitride film on a substrate through the reaction of titanium tetrachloride and ammonia while minimizing corrosion of the underlying layer. A first titanium nitride layer is formed on a substrate by reacting titanium tetrachloride and ammonia with each other in the supply-limited region while minimizing corrosion of the underlying layer. Thereafter, a second titanium nitride layer is formed on the first titanium nitride layer in the reaction-limited region while achieving good step coverage.</p>
申请公布号 EP1715079(A1) 申请公布日期 2006.10.25
申请号 EP20040807927 申请日期 2004.12.27
申请人 TOKYO ELECTRON LTD. 发明人 MURAKAMI, SEISHI;TADA, KUNIHIRO
分类号 C23C16/34;H01L21/28;H01L21/285;H01L21/768 主分类号 C23C16/34
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