| 摘要 |
<p>A surface light emitting semiconductor laser element (10), comprises a substrate (12), a lower reflector (14) including a semiconductor multi-layer disposed on the substrate, an active layer (18) disposed on the lower reflector, an upper reflector (22) including a semiconductor multi-layer disposed on the active layer, a compound semiconductor layer (24) having a first opening (30) for exposing the upper reflector and extending over the upper reflector, and a metal film (36) having a second opening (38) for exposing the upper reflector disposed inside of the first opening and extending over the compound semiconductor layer, wherein the metal film and the compound semiconductor layer constitute a complex refractive index distribution structure where a complex refractive index is changed from the center of the second opening towards the outside. A method of emitting laser light in a single-peak transverse mode is also provided.</p> |
