SPICE SIMULATION METHOD OF MOSFET

摘要

A method for simulating a MOSFET(Metal Oxide Semiconductor Field Effect Transistor) with a SPICE(Simulation Program with IC Emphasis) is provided to predict electrical property of the MOSFET having an asymmetrical source/drain structure and maximize design efficiency with a prediction result. The first capacitance set of a source area is measured and the first device variable is extracted from the first capacitance set. The second capacitance set of a drain area is measured and the second device variable is extracted from the second capacitance set. The third device variable is extracted from the third capacitance set corresponding to a difference between the first and second capacitance set. A capacitance value of an added diode defined by the third device variable is added to the capacitance value of a source diode corresponding to the source area or the capacitance value of a drain diode corresponding to the drain area.