| 摘要 |
An ESD(electrostatics discharge) protect circuit is provided to reducing ESD fail by partially turning on of a GGNMOS. The ESD(electrostatics discharge) protect circuit is located between a pad(110) and a ground terminal(Vss), and discharges electrostatics to the ground terminal. The ESD protect circuit is comprised of a plurality of NMOS transistors(n1-n10) and a diode. The plurality of NMOS transistors are connected between the pad and the ground terminal parallel. The each NMOS transistors are connected to a gate and a source commonly. A body of the NMOS transistor is connected to the ground terminal. A diode is commonly connected between a gate-source of the NMOS transistors and the ground terminal. The diode is n-type diode and is connected forward between the gate-source of the NMOS transistors and the ground terminal.
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