SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor memory device and a method of fabricating the same by using a recess channel array transistor are provided to minimize poor contact and to decrease a contact resistance of a source and a drain. A semiconductor substrate(100) is limited by a device isolation layer(10) and includes an active region where a trench(15) is formed for making at least one recess channel. An epitaxial layer(200) is formed on a whole surface of the active region except the trench and a portion of the device isolation layer. A gate is formed by filling the trench. A source and drain regions are formed to locate the gate between the source/drain regions. The epitaxial layer includes impurities to reduce a contact resistance of the source/drain electrode. A lateral spacer is formed on both lateral sides of the gate and a portion of a surface of the epitaxial layer. The epitaxial layer has a flat and uniform surface profile.