| 摘要 |
A semiconductor device having a low resistive contact on a p-type layer of a wide band gap compound semiconductor layer and a method for manufacturing the same are provided to reduce a resistance between a p-type conductive layer and a contact therewith. A p-type gallium-nitrogen system compound semiconductor layer(610) is formed on a substrate(600). P-type carbon nano tube layers(620) are formed to be connected to the p-type gallium-nitrogen system compound semiconductor layer. A metal contact(630) is formed to be connected to the p-type carbon nano tube layers. The p-type gallium-nitrogen system compound semiconductor layer is one selected from the group consisting of GaN, AlxGaN, and InxGayN. The p-type gallium-nitrogen system compound semiconductor layer is a semiconductor layer in which magnesium Mg is implanted as an impurity.
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