发明名称 TRANSISTOR FOR ELECTROSTATIC DISCHARGE CIRCUIT
摘要 A transistor for electrostatic discharge circuit is provided to divide current flow efficiently by locating a salicide region on the source region to cover each contacts. Gate lines(210) which have a strip shape are mutually located at a distance and are arranged in a vertical direction. The gate lines is comprised of a gate conductive film. A gate insulation film is located under the gate conductive film. A source region(220) and a drain region(230) are alternatively arranged an active region between the gate lines. In the source region and the drain region, a plurality of contact(240) are arranged for connecting external terminals respectively. A salicide region(235) is located on the drain region and is arranged to cover the contacts. The salicide region which is located on the source region covers each contacts and crosses the source region in a horizontal direction.
申请公布号 KR100641544(B1) 申请公布日期 2006.10.25
申请号 KR20050132094 申请日期 2005.12.28
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 OH, JUN SUNG
分类号 H01L27/04 主分类号 H01L27/04
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